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www.irf.com 1 10/24/07 irf8707pbf hexfet power mosfet notes through are on page 9 benefits very low gate charge very low r ds(on) at 4.5v v gs ultra-low gate impedance fully characterized avalanche voltage and current 20v v gs max. gate rating 100% tested for rg lead-free applications control mosfet of sync-buck converters used for notebook processor power control mosfet for isolated dc-dc converters in networking systems top view 8 12 3 4 5 6 7 d d d d g s a s s a so-8 v dss r ds(on) max qg 30v 11.9m @v gs = 10v 6.2nc description the irf8707pbf incorporates the latest hexfet power mosfet silicon technology into theindustry standard so-8 package. the irf8707pbf has been optimized for parameters that are critical in synchronous buck operation including rds(on) and gate charge to reduce both conduction and switching losses. the reduced total losses make this product ideal for high efficiency dc-dcconverters that power the latest generation of processors for notebook and netcom applications. absolute maximum ratin g s parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead CCC 20 r ja junction-to-ambient CCC 50 c/w va w c max. 11 9.1 88 20 30 -55 to + 150 2.5 0.02 1.6 downloaded from: http:///
2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units bv dss drain-to-source breakdown voltage 30 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 0.022 CCC v/c r ds(on) static drain-to-source on-resistance CCC 9.3 11.9 CCC 14.2 17.5 v gs(th) gate threshold voltage 1.35 1.80 2.35 v ? v gs(th) gate threshold voltage coefficient CCC -5.8 CCC mv/c i dss drain-to-source leakage current CCC CCC 1.0 CCC CCC 150 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 25 CCC CCC s q g total gate charge CCC 6.2 9.3 q gs1 pre-vth gate-to-source charge CCC 1.4 CCC q gs2 post-vth gate-to-source charge CCC 0.7 CCC q gd gate-to-drain charge CCC 2.2 CCC q godr gate charge overdrive CCC 1.9 CCC see figs. 15 & 16 q sw switch char g e (q gs2 + q gd ) CCC 2.9 CCC q oss output charge CCC 3.7 CCC nc r g gate resistance CCC 2.2 3.7 ? t d(on) turn-on delay time CCC 6.7 CCC t r rise time CCC 7.9 CCC t d(off) turn-off delay time CCC 7.3 CCC t f fall time CCC 4.4 CCC c iss input capacitance CCC 760 CCC c oss output capacitance CCC 170 CCC c rss reverse transfer capacitance CCC 82 CCC avalanche characteristics parameter units e as si n gl e p u l se a va l anc h e e ner gy mj i ar a va l anc h e c urrent a diode characteristics parameter min. t y p. max. units i s continuous source current CCC CCC (body diode) i sm pulsed source current CCC CCC ( bod y diode ) v sd diode forward voltage CCC CCC 1.0 v t rr reverse recovery time CCC 12 18 ns q rr reverse recovery charge CCC 13 20 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) conditions see fig. 18 max. 53 8.8 ? = 1.0mhz conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 11a mosfet symbol v ds = v gs , i d = 25a v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 8.8a v ds = 15v v gs = 20v v gs = -20v v ds = 24v, v gs = 0v t j = 25c, i f = 8.8a, v dd = 15v di/dt = 300a/ s t j = 25c, i s = 8.8a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 4.5v, i d = 8.8a v gs = 4.5v typ. CCC v ds = v gs , i d = 25a r g = 1.8 ? v ds = 15v, i d = 8.8a v ds = 24v, v gs = 0v, t j = 125c ana i d = 8.8a v gs = 0v v ds = 15v nc ns pf m ? a 3.1 88 a CCC downloaded from: http:///
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 11a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v 60s pulse width tj = 25c 2.3v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.3v 60s pulse width tj = 150c vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v 1 2 3 4 5 6 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60s pulse width downloaded from: http:///
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100sec 1msec 10msec 012345678 q g , total gate charge (nc) 0.0 1.0 2.0 3.0 4.0 5.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 8.8a downloaded from: http:///
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 t a , ambient temperature (c) 0 2 4 6 8 10 12 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) ri (c/w) i (sec) 2.2284 0.0001697.0956 0.013738 25.4895 0.68725 15.1981 25.8 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri a a 4 4 r 4 r 4 notes: 1. duty factor d = t / t 2 . peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.3 1.6 1.9 2.2 2.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25a i d = 250a downloaded from: http:///
6 www.irf.com fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 15. gate charge test circuit 1k vcc dut 0 l s 20k fig 14. unclamped inductive test circuit and waveform t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 16. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 5 10 15 20 25 30 35 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 11a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.67a 0.82a bottom 8.80a downloaded from: http:///
www.irf.com 7 fig 17.

for n-channel hexfet power mosfets
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? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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8 www.irf.com so-8 package outlinedimensions are shown in milimeters (inches) so-8 part marking information

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www.irf.com 9
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 1.38mh, r g = 25 ? , i as = 8.8a. pulse width 400s; duty cycle 2%. when mounted on 1 inch square copper board. r is measured at t j of approximately 90c. data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 10/2007 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reeldimensions are shown in milimeters (inches) note: for the most current drawing please refer to ir website at http://www.irf.com/package downloaded from: http:///

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